InP Double-Hetero Bipolar Transistor Technology for 130 GHz Clock Speed
01 January 2006
Indium Phosphide-based Double-Heterostructure Bipolar Transistors have high potential for analog, digital, and mixed-signal applications requiring extreme clock speed and high voltage swing. To harness the full performance of the InGaAs/InP material system, the HBTs need to be scaled to submicron dimenions.
