InP/GaInAs DHBT with TiW emitter demonstrating fT/fmax ∼340/400GHz for 100 Gb/s circuit applications
27 August 2012
In this work we report the performances of an InP/GaInAs DHBT developed in IIIâ"V Lab with a TiW metal emitter. 0.5 µm effective emitter size HBTs demonstrate fT and fmax above 320 and 430 GHz respectively. Very high yield 0.7 µm emitter width HBTs showing fT/fmax ∼ 340/400 GHz have been used to fabricate a trans-impedance amplifier with single-ended input and differential output for 100-Gb/s optical communications.