Interfacial Microstructure and Electrical Properties of Pt/Ti Ohmic Contact to p-In sub 0.53 and Ga sub 0.47 as Formed by Rapid Thermal Processing

Cross-sectional transmission electron microscopy (XTEM) of this sample revealed an interfacial reaction zone with complicated microstructure, and the dominant interfacial compound was identified to be InAs. Further increase in RTP temperature resulted in a change in the microstructure, and degradation of the contact resistance. The temperature dependence characteristic of the specific contact resistance of as-deposited Pi/Ti contact to InGaAs revealed a thermionic emission dominated carrier transport mechanism with an effective barrier height, phi sub o , of 0.13V.