Investigation of Fluorocarbon Plasma Deposition from c-C4F8 for Use as Passivation during Deep Silicon Etching

The purpose of this work is to examine in closer detail the passivating film formed during the deposition step of the Bosch process. Studies to date on the Bosch process have focused primarily on the etch step or on optimizing the relative etch and deposition times. In contrast, this work will focus on the passivating film composition and the effect of deposition parameters on that composition.