Investigation of Triethylarsenic as a Replacement for Arsine in the Metalorganic Chemical Vapor Deposition of GaAs
01 January 1988
GaAs growth experiments have been performed with triethylarsenic (TEAs) to investigate its potential as a replacement for arsine, and to compare the effects on film properties of substituting ethyl for methyl groups in alkyl arsenic sources used in metalorganic chemical vapor deposition.