Metalorganic chemical vapor deposition.

Metalorganic chemical vapor deposition is a process that employs two or more metalorganic chemicals (e.g., trimethylgallium, (CH(3))(3) Ga) or one or more metalorganic source and one or more hydride source (e.g., AsH(3) to form the corresponding intermetallic crystalline solid solution. The metalorganic chemical vapor deposition (MOCVD) materials technology is a vapor-phase growth process that is becoming widely used in the study of the basic physics of novel materials as well as in the growth of complex semiconductor device structures that are of increasing importance in the development of new optoelectronic and photonic systems. This paper will describe the MOCVD process and will briefly review some of the device applications and results that have been realized using this process with particular emphasis on the III-V compound semiconductors.