Optical Properties of Novel Band Structured Engineered GaAs Structures Grown by Gas Source Molecular Beam Epitaxy

Some of the most exciting prospects for future opto-electronic applications are those emerging from technologies based on GaAs. Of all compound semiconductor materials GaAs crystals are made ideal for opto- electronic applications by virtue of their intrinsically high purity, doping control over a wide dynamic range and nearly perfect heterostructure and quantum well formation with lattice matched alloys of AlGaAs. Among all GaAs growth technologies, either those whose properties are derived from equilibrium thermodynamic (bulk-like) or surface kinetic ones, gas source molecular beam epitaxy (GSMBE) has produced some of the most promising growth and structure results. In the GSMBE growth approach the Group III and doping fluxes are derived from elemental solid sources while the Group V flux comes from thermally decomposed arsine. This method provides GaAs growth based on the arrival of atomic monomers to the surface for the first time.