Silicon epitaxial planar transistors. I. Appraisal
01 January 1963
The advantages of silicon epitaxial planar transistors using gold doping are enumerated and the techniques are shown to be, adaptable to u.h.f. and high-power applications, although not necessarily in the same device. The inherent stability of the planar transistor is demonstrated by the results of like tests run on unencapsulated devices under very adverse conditions.