Structural Characteristics of Si and Si-Ge Epitaxial Layers Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD)

Thin Si sub (1-x) Ge sub (x) (x=0 to 0.5) films have been grown by RTCVD, a technique that combines conventional chemical vapor deposition and rapid thermal heating. The structural perfection and purity of these films have been studied by TEM, etch pitting, deep level transient spectroscopy (DLTS), SIMS, photoluminescence (PL) and ion-scattering. Intrinsic Si films grown at >=2800C show few defects ( 1o sup 2 cm sup -2), less than 10 sup 12 cm sup -2 electrically active defects (DLTS), and exhibit bound exciton transitions (PL).