Publications

Tantalum thin film circuit techniques developed at Bell Telephone Laboratories 1 can produce resistor and capacitor circuit elements and associated interconnections.

Luminescent Tb sup (3+):Y sub 3 Al sub 3 Ga sub 2 0 sub (12) films were prepared by RF-sputtering in a planar magnetron system.

Specular, crackfree thin films of the refractory conductor zirconium boride have been deposited for possible applications in combined contact/diffusion barrier metallization schemes.

In earlier studies, we reported on measurements of airborne concentrations and surface accumulations of ionic substances at electronic equipment installations at Wichita, Kansas and Lubbock, Texas.

As a first step towards developing a process for producing heterostructures such as GaAs/Ge/Si entirely by chemical vapor deposition, Ge films have been deposited on (100) Si by the pyrolysis of Ge

The explosive demand for wireless data services that followed the introduction of application phones continues to create significant challenges for mobile operators.

A deep band of {311} defects was created 520nm below the silicon surface with a 350 keV Si implant followed by a cluster forming rapid thermal anneal (800C, 1000s).

Rutherford backscattering combined with channeling is used as a measure of the crystalline quality of thin films.

Depth information provides a strong cue for occlusion detection and handling, but has been largely omitted in generic object tracking until recently due to lack of suitable benchmark datasets and a

A method to perform depth selective NMR spectroscopy with a surface coil has been devised.