As a first step towards developing a process for producing heterostructures such as GaAs/Ge/Si entirely by chemical vapor deposition, Ge films have been deposited on (100) Si by the pyrolysis of Ge
The explosive demand for wireless data services that followed the introduction of application phones continues to create significant challenges for mobile operators.
A deep band of {311} defects was created 520nm below the silicon surface with a 350 keV Si implant followed by a cluster forming rapid thermal anneal (800C, 1000s).
Rutherford backscattering combined with channeling is used as a measure of the crystalline quality of thin films.
Depth information provides a strong cue for occlusion detection and handling, but has been largely omitted in generic object tracking until recently due to lack of suitable benchmark datasets and a
A method to perform depth selective NMR spectroscopy with a surface coil has been devised.
We have achieved atomic-resolution imaging of single dopant atoms buried inside a crystal, a key goal for microelectronic device characterization, in Sb-doped Si using annular dark-field scanning t
A deque with heap order is a deque (double-ended queue) such that each item has a real-valued key and the operation of returning an item of minimum key is allowed as well as the usual deque operati
In the course of a project related to computer-aided integrated circuit mask design, it became necessary to describe the configuration which is formed when two polygon-like plane figures are superi
T h e interaction of the modes of a multimode waveguide can be described by coupled wave equations. 1,2,3 The coupling between the waves is caused by imperfections of the waveguide structure.
