A new optical logic device has been developed which offers many significant advantages over current devices.
A new diffusion technique using Zn sub 3 P sub 2 layer as the diffusion source with rapid thermal annealing is evaluated, and a number of interesting features are discussed.
T h e minority-carrier diffusion length is an important q u a n t i t y characterizing the properties of a semiconductor material or device, particularly in any situation involving the transport of
We propose a distributed least-mean squares (LMS) procedure based on a diffusion strategy for localization and tracking of mobile terminals in cellular networks.
The diffusion of deuterium in palladium foil has been investigated using an electrolytic cell coupled with a mass spectrometer.
Path gain in a cluttered industrial environment at 28 GHz is found to be well modeled by diffusion with a single absorption parameter, with 5.2 dB RMS error.
Silicon-impurities with an initial Dirac-delta-function- like distribution profile are diffused into GaAs using rapid thermal annealing.
We have measured the radiation-enhanced diffusion of Au in amorphous Si in the temperature range 77-700 K. Gold was implanted to depths of 500angstroms at concentrations of an atomic %.
The introduction of Co silicide into the process flow for Si integrated circuit manufacturing has necessitated a thorough understanding of the effec tof Co contamination on the electrical propertie
The diffusion coefficients of Cu, Ag, and Au have been measured in implanted, amorphous Si.
