Spectral holeburning in In sub (0.53) Ga sub (0.47) As/InP alloy quantum wells at low temperatures shows that all heavy- hole excitons within the inhomogenously broadened line are strongly localize
Exciton photoluminescence pattern generation is investigated in multiple quantum wells.
We present a study of a microcavity polariton system in the presence of an optically induced electron gas.
A comprehensive experimental study of the photoluminescence (PL) spectral evolution under a magnetic field (B = 25 T) applied perpendicularly to a high-mobility two-dimensional electron gas (2DEG),
T-shaped GaAs quantum-wire lasers were measured to study origin of laser gain and the exciton Mott transition in one dimension.
We perform time integrated degenerate four-wave mixing (DFWM) measurements to investigate exciton dephasing in a GaAs/A1As lateral superlattice (LSL) with a tunable band gap modulation.
We investigated the evolution of photoluminescence (PL) spectra with the electron-hole (e-h) pair density in a single T-shaped quantum wire of high quality grown by a cleaved-edge overgrowth method
We study excitonic states in the presence of applied electric field in 8-nm GaAs coupled quantum wells (QW's) separated by a 4-nm Al0.33Ga0.67As barrier and in 6-nm In0.1Ga0.9As coupled QW's separa
The quantum confined Pockels effect results from the combination of the genuine interface roto-inversion asymmetry and the breakdown of quantum well inversion symmetry due to the applied electric f
The confinement of electron-hole pairs in ultrathin semiconductor layers produces quantum size effects that modify drastically the excitonic behavior as compared to that of the bulk parent material
