This talk will focus on silica PICs and InP PICs. Silica PICs are well suited for in-line components, which must be low loss and can have slow dynamics.
An overview of InP based quantum dot mode-locked laser for photonic switching applications is given.
Due to the ever increasing demand for bandwidth and to lower the cost per transmitted bit, next generation lightwave systems will operate at data rates of 40 Gb/s or beyond.
The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbcco of about 10 V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement t
The combination of device speed (fT, fmax > 150 GHz) and breakdown voltage (Vbceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to imple
We report on-wafer characterization results up to 500 GHz on a 0.4×5 ?m2 InP/InGaAs DHBT.
We report on-wafer characterization results up to 500 GHz on a 0.4×5 µm² InP/InGaAs DHBT.
We present key high-speed analog circuits and digital building blocks realized in our 0.5 um InP DHBT technology.
In this paper, a D-band stacked power amplifier in a 0.7-µm InP DHBT technology is reported.
Various mixed-signal very-high-speed integrated circuits have been developed using InP DHBTs. These circuits have been designed for fiber-optic 43 Gbit/s transmissions applications.
