A compact narrow linewidth semiconductor laser is described.
We have developed single frequency and single spatial mode laser structures with very narrow linewidth (~850 kHz @ 15 mW measured with an ECL).
We have developed single frequency (SMSR~50dB) and single spatial mode (M21.5) laser structures with stable narrow linewidth (1MHz) and high optical power (40mW), using an aluminium free active reg
We have developed single frequency and single spatial mode laser structures with stable narrow linewidth (
We have developed single frequency and single spatial mode laser structures with stable narrow linewidth (1MHz) and high optical power (40mW), using an aluminium free active region for Cs pumping a
We discuss a novel surface emitting InGaAsP LED with a relatively narrow spectrum obtained by the integral growth of a 2.6 micron thick semiconductor absorbing, or filtering, layer on a conventio
We propose and demonstrate an integrated narrow-band optical isolator in InP using two phase modulators in series. The phase modulators are driven with a single-frequency signal in quadrature.
We present the phase locking of an array of index-guided tapered laser diodes. An external cavity based on the self-imaging Talbot effect has been built.
We report an electro-optically tunable, single-frequency extended cavity laser with a linewidth of less than 60 kHz.
The Internet of Things will bring billions of devices that are inter-connected using cellular networks.
