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Applications on E-Beam Lithography

28 July 1986

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Electron beam lithography (EBL) is a high resolution and versatile primary method of patterning planar materials. While the serial nature of this exposure method tends to make it too slow for use in most commercial integrated circuit manufacture, it is nearly an ideal tool to support a wide variety of research needs. This talk will present the evolution of the EBL systems used in our research at AT&T Bell Laboratories and will parallel the microstructure research which has made possible. As a recent example, results will be presented on our work on single electron traps in quasi one-dimensional MOSFETs.