Defect and impurity behavior from the recrystallization of amorphous silicon layers.
01 January 1984
Various defect arrays are characterized in silicon following the implantation and annealing of amorphous layers. The four localized dislocation arrays are: (1) the "end of range" disorder found just beyond the amorphous/ crystalline (a/c) interface, (2) "spanning" dislocations found between the a/c interface and the surface, (3) "zipper" boundaries formed after double- sided phase regrowth of buried amorphous layers, and (4) high concentration arsenic-impurity nucleated dislocations. The dislocation array character (e.g the Burger Vectors), the thermal behavior including a removal energy, and impurity gettering effects are described.