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Determination of Ion Implantation Damage Profiles in III-V Compounds by Means of an Electrochemical Capacitance-Voltage Technique

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Temperature dependent electrical measurements on light ion bombarded n-type In0.53Ga0.47As established the presence of deep donors. The depth profiles of the net donor concentration of these samples were obtained by the electrochemical capacitance-voltage technique, and the profiles were compared with the ion damage loss mechanism. The capacitance-voltage technique has also been applied to n-type InP. Further extensions of this technique are discussed.