Electrical Activation Kinetics for Shallow Boron Implants in Silicon

Diffusion mediated electrical activation of boron implanted in Si at 10 sup (15) cm sup (-2) dose and energies from 500 eV to 1 keV, which involves B-Si clusters, was examined over a wide variation in annealing conditions. Diffusion depths and carrier densities were determined by modeling sheet electrical transport. Diffusivities and activation energies vary with the activated proportion for both isothermal and isochronal annealing. Near electrical activation of half the dose, mean thermal activation energies are 4 eV for boron diffusivity and 5 eV for dopant activation rate.