Fabrication of Crystalline-Amorphous Superlattices by Differential Ion-Beam Damage

A study is presented of the build-up of ion-beam damage in multilayers and superlattices of elemental and compound semiconductors. MBE-grown superlattices of GeSi-Si and GaAs-AlAs are implanted with MeV ions and the build-up of damage is studied using a combination of RBS and channeling and TEM. The appearance of defects and amorphous regions in these layers is studied as a function of dose, implantation temperature, implanted species and layer compositions.