GaAs structures with electron mobility of 5 x 10 sup 6 cm sup 2 /Vs.
01 January 1987
Modulation-doped GaAs heterostructures with low temperature electron mobilities of 5.0 x 10 sup 6 cm sup 2 /Vs at a two- dimensional electron areal density of 1.6 x 10 sup (11) cm sup (-2) have been made. The mobilities are the highest ever observed in a semiconductor.
Multiple quantum wells for GaAs prepared by similar methods showed electron mobilities up to 0.54 x 10 sup 6 cm sup 2 /Vs at an areal density of 5.3 x 10 sup (11) cm sup (-2) per layer, which also exceeds any mobility value previously reported for multiple-well structures. The structures were grown by molecular beam epitaxy with a sheet- doping technique.