Gas source molecular beam epitaxy of Ga(x)In(1-x)P(y)As(1-y).

The use of P(2) and As(2) beams generated by several different beam sources for the growth of InP, GaAs and Ga(x)In(1-x)P (y)As(1-y) has been investigated. Accommodation coefficients for As(2) and P(2) were determined for heated GaAs and InP surfaces. It is demonstrated that a source utilizing decomposition of the hydrides over the range 200 to 2000 torr and providing a leak of the resulting P(2), As(2) and H(2) molecules into an MBE system can be used for the growth of Ga(x)In(1-x)P (y)As(1-y) layers lattice matched to InP.