Hall Effect and Resistivity of In-CdSe

We have carried out Hall effect and resistivity measurements on samples of In-doped CdSe with carrier concentrations below the metal-insulator transition, in the temperature range between 6K and 80K. We find evidence for activated conduction in an impurity band below the conduction band. The Hall coefficient and the resistivity show different activation energies implying mobility conduction. These results will be discussed in relation to fluorescence data obtained on the same samples.