High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular beam epitaxy.
01 January 1987
High resolution X-ray diffraction (HRXRD) studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices and one InGaAsP/InP superlattice grown by gas source molecular beam epitaxy (GSMBE). For comparison, HRXRD both with a three-crystal geometry and with a four-crystal monochromator was used along with conventional double-crystal XRD. The best resolution in the X-ray satellite patterns was obtained with the four- crystal monochromator, providing a resolution of one molecular layer in the periodicity of the superlattice.