Hole-Acoustic Phonon Energy Loss Rates in GaAs Quantum Wells Determined by Light Scattering
We report a determination of the cooling of the high mobility two- dimensional hole gas in GaAs/AlGaAs heterostructures. We consider in this work the carrier temperature range between 3 K and 30 K in which carrier cooling is due to emission of acoustic phonons. The present work represents the first experimental determination of hole energy loss rates in GaAs/AlGaAs heterostructures.