InGaAs Metal/Semiconductor/Metal photodetectors with Fe:InP Barrier Layers Grown by Chemical Beam Epitaxy.
01 January 1989
An InGaAs Metal/Semiconductor/Metal (MSM) photodetector with a dark current less than 1 mu A is described. An Fe-doped InP layer was introduced between the metal and the InGaAs absorbing layer to improve the Schottky barrier height. A breakdown voltage of 30 V was achieved. A DC quantum efficiency of 64% and an impulse response 1/e fall time of 190 ps were measured for a 20 mu m x 100 mu m device. The layer structure of our device is very attractive for integration with high performance InGaAs/InP FETs.