Microwave Performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb Double Heterojunction Bipolar Transistors

In this letter, we report on high- speed InAlAsSb/InGaSb/InAlAsSb double heterojunction bipolar transistors (HBTs) (DHBT) fabricated using a conventional triple- mesa process. Current gain cutoff frequencies f(T) of 52 GHz and maximum oscillation frequencies f(MAX) of 48 GHz were extracted from measured scattering parameters for devices with 1 x 15 mu m(2) emitter size. To the best of our knowledge, these results are the first RF performance ever reported, and they demonstrate the feasibility and potential of InGaSb- based HBT for high- speed electronics applications.