Molecular Beam Epitaxial Growth of the II-V Semiconductor Compound Zn sub 3 As sub 2

We report the first molecular beam epitaxial growth of the II-V semiconducting compound Zn sub 3 As sub 2. Commensurate single domain growth of the tetragonal crystal was obtained in the temperature range of 300-360C on InP. The growth on GaAs was incommensurate due to larger lattice mismatch. The unintentionally doped material is p type. At room temperature, - approximately 5 x 1018 cm sup -3 micron = 43 cm sup 2/V-sec, and the absorption edge is at 0.99 eV. Low temperature data suggest that the lowest acceptor level is very close in energy to the valence-band maxima located at k not equal 0, while the k = 0 energy uppermost valence band is slightly lower.