On the capacity of sticky storage devices.

When required to make a transition to a new state, a memory cell may, with a probability dependent on the state, refuse to do so (i.e. "stick"). Assuming that error correcting codes may be used at each read-write cycle, one seeks the maximum error-free (in the Shannon sense) long-term average capacity per cell and cycle. This problem is solved here for binary cells with either unilateral or symmetric stickiness.