Optimized growth of lattice-matched InAlN/GaN heterostructures by molecular beam epitaxy

We present a systematic study on the growth of the ternary compound InAlN by molecular beam epitaxy. This work concentrates on In mole fractions x around 0.17, as this composition is in-plane lattice-matched to GaN. At a growth temperature of 540C, high quality material was obtained using a total metal to nitrogen flux ratio ~1. Using these growth parameters, high quality GaN/InAlN superlattices were obtained without growth interrupts.