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Structural Analysis of Ultra-Thin Epitaxial Ge/Si Films on Si(100)

01 January 1987

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The development of group IV based heterostructures has provided an exciting new direction in layered semiconductor growth. Early work demonstrated the successful growth of random alloy thin films (>50A) of GexSi1-x epitaxially grown on Si(100) and superlattices consisting of alternating laters of the alloy and pure Si. Our current effort uses the excellent control possible through MBE to grow ordered structures of Ge Si on Si(100), with individual layers as thin as 2.7A (2 monolayers). The goal here is to produce new atomic arrangements which have no counterpart in the equilibrium bulk phase diagram.