The influence of hydrogen annealing on electrical properties of polycrystalline-silicon films.
01 January 1986
The influence of isothermal hydrogen annealing on electrical properties of LPCVD boron implanted polysilicon films at various annealing temperatures from 330C to 500C has been reported. The annealing results can be understood by carrier-trapping model. The resistivity reductions are ascribed to the removal of dangling-bond carrier traps at grain boundaries by hydrogenation.