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The Role of Substrate Temperature in the Quality of Buried Oxide Layers

01 December 1986

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From the early work on high dose oxygen implantation for buried Si02 formation, it is apparent that the temperature (T) of the Si substrate during the implant has a strong influence on the quality of both the Si02 layer and the overlying Si. For substrate T's 1300degreesC) anneal. At higher substrate T's (>500degreesC), dynamic annealing eliminates the amorphous Si, but the implanted oxygen appears to segregate during the implant to form islands of Si02. As these islands start to coalesce during the high T anneal, they trap crystalline Si which cannot escape by diffusion. We have seen this effect clearly in substoichiometric implants, and believe it is also operative during stoichiometric implants.