TRANSITION RATE FOR ELECTRON TUNNELING INTO Si-SiO sub 2 INTERFACE STATES.

Transition rates for electron tunneling between interface states and the metal in mos structures are determined from the temperature dependence of barrier height measured by steady-state {1/C sup 2 - V} characteristics. The tunneling attempt-to-escape frequency 10 sup {15.2 +- 1.5} sec sup (-1) of interface states and the attenuation coefficient 0.88 +- 0.11 {A dot} sup (- 1) in the oxide are obtained in agreement with previous data from capacitance transient spectroscopy and theory.