We report the results of a study of Ge-Si strained-layer superlattices grown on Si substrates. These results allow us to study the transition between superlattice-like and bulk-like states.
This is the write-up of a talk to be given at the Fourth International Symposium on Small Particles and Inorganic Clusters Aix-en- Provence, July 5 - 9, 1988.
The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than 50 years of research.
The calculated band properties of the cuprate and bismuthate high-T sub c superconductors provide valuable insight regarding the chemistry and doping mechanisms that are operative in these compound
The Mossbauer effect of the 37.2-keV gamma line of Sb has been employed to study the electronic configuration of Sb ions in BaPb sub (1-x) Sb sub x O sub 3 (0.1= x =0.4) superconducting compounds.
The local density functional approach for calculating heterojunction valence band offsets is used to examine two aspects of the Si/Ge strained layer system.
A combination of linear augmented-plane-wave and Tight-Binding (TB) techniques has been applied to calculate the electronic band structures of selected members of the Ba sub (n+1) Pb sub n O sub (3
A unique feature of the new oxide superconductors is the fact that E sub F falls within the O(2p) band manifold, thereby making O an electronically active constituent.
The electronic structure of Ba sub 2 YCu sub 3 O sub (6.9) has been calculated using the linear augmented-plane-wave method.
The results of electronic-structure calculations for ordered Ba sub (0.5) K sub (0.5) BiO sub 3 alloys confirm that the antibonding Bi(6s)-O(2p) conduction band near E sub F in the cubic BaBiO sub
