The linear and quadratic electrooptic coefficients in narrow single and strongly coupled GaAs-AlxGa1-xAs quantum wells have been measured, The quadratic electrooptic effect is enhanced over that of
Tin alloys such as Sn-0.7% Cu and Sn-2% Bi were identified as viable alternatives to tin-lead finishes.
An analytical solution for the metal resistance-controlled plating current distribution on circular wafers is obtained to determine the conditions under which a uniform metal film can be electro-de
Electro-reflectance spectroscopy of Ge(x)Si(1-x) decoupled multiple quantum-well structures grown by MBE has been used to yield confinement energy and strain shifts for the E(0)) and E(1) optical
We report the first absolute measurement of electric-field- induced changes in refractive index in InGaAs quantum well heterostructures.
We have measured electric-induced-changes in refractive index in GaAs- and InP-based quantum well heterostructures.
We have studied electron emission, luminescence and sputtering from thin Ar films excited by 2 MeV protons.
Exactly one hundred years ago in 1913, Millikan analyzed the motion of droplets electrified by a cathode ray tube in a uniform electric field to quantify the fundamental charge of an electron.
A comparison of the SEM EDX spectra for the metal charge contacts from the field-returned cordless phones and for the laboratory samples of fixed gap discharge (FGD) tests reveals similar chemical
The Electrostatic Discharge (ESD) sensitivities of thin film passive components from various hybrid integrated circuits (HIC) were characterized using two models.
