InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ~300angstroms.
For the two-impurity Kondo system, the low-temperature properties -- impurity spin-spin correlation function, susceptibilities, specific heat, and Wilson ratio -- are strongly nonuniversal function
We report germanium epitaxial growth using standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) at 200°C.
Silicon MOS devices show significantly improved performance when operated at 77K while high-T sub c superconductors may allow very high performance and high density transmission lines.
We will report and review several dielectric compositions with low sintering temperatures, high dielectric constants and low temperature coefficients.
Recent developments in the organometallic growth of II-VI compounds such as photolysis assisted growth and the interdiffused multilayer process (IMP) have shown the feasibility of high quality grow
Recent developments in the organometallic growth of II-VI compounds such as photolysis assisted growth and the interdiffused multilayer process (IMP) have shown the feasibility of high quality grow
The charge transport in high-mobility polycrystalline pentacene field-effect transistors is investigated in the temperature range from 1.7 to 40 K for carrier concentrations ranging form 10 sup (11
InP-based Fabry-Perot quantum dashes-in-a-well lasers were characterized in terms of noise performances, relative intensity noise and ageing profiles.
We demonstrate experimentally low-timing-jitter all-optical clock recovery for 40-Gb/s NRZ-DPSK signals using a mode-locked quantum-dot Fabry-Perot laser.
