We have investigated methyl, ethyl and butyl-based organoarsenic compounds as alternatives to arsine in the metalorganic vapor phase epitaxy (MOVPE) of GaAs.
This letter describes the combined use of a form of near field photolithography based on conformable phase masks, microcontact printing and shadow masking for low cost fabrication of organic transi
The talk will review the physical phenomenon and application of enhanced gate current injection by use of substrate bias.
A high speed, low drive voltage InGa AsP/InP phase modulator with a multiple quantum well waveguide and coplanar travelling wave electrodes has been developed.
We report GaAs/AlGaAs quantum well waveguide phase modulators with high phase shift coefficients, as large as 520 degrees per Volt-mm.
Silicon photonics may be a compact integration platform to implement power-efficient and high-bandwidth optical transceivers/transponders.
Surface-normal electroabsorption modulators (SNEAMs) are appealing for short-reach communication systems because of their outstanding properties, such as ultrawide bandwidth and polarization-insens
Sub-0.1microns technologies require gate oxide thicknesses t sub (ox) 3nm and high substrate doping (N aub A > 10 sup (18) cm sup (-3).
In 2005, Griffin showed that an InP phase-shift-keying/duobinary Mach-Zehnder interferometer (MZI) modulator could achieve good transmission performance at 10 Gb/s, despite modest residual amplitud
Today, in the face of ever increasing communication traffic, minimizing power consumption in data communication systems has become a challenge.
