We present a high power semiconductor Master Oscillator Power Amplifier monolithically integrated on InP, which includes a modulation section.
We demonstrate the monolithic integration of a buried heterostructure semiconductor optical amplifier (SOA) and a deep ridge PIN photodiode for high-speed on-off keying links at 1.55 μm.
We demonstrate the monolithic integration of a buried heterostructure SOA and a deep ridge PIN photodiode for 100 Gbit/s OOK links at 1.55microns.
This work demonstrates the integration of buriedheterostructure (BH) lasers and optical amplifiers (SOAs) in a generic photonic platform.
Monolithically integrated PIN-FET amplifiers have been fabricated using ion implanted InP JFETs.
In this paper we describe the stop-cleaving technique for locally cleaving the mirrors of semiconductor lasers without cleaving the entire substrate and their applications.
We demonstrate how to monolithically combine silicon waveguides with MEMS-based phase shifters in a single SOI chip.
We demonstrate how to monolithically combine silicon waveguides with MEMS-based phase shifters in a single SOI chip. We design and test a folded Mach-Zehnder interferometer switch.
We demonstrate a MEMS-based 1x2 optical waveguide switch fabricated entirely within silicon-on-insulator (SOI).
The future technology migration in access networks compels to develop key innovative transmitters operating at 10Gb/s around 1550nm and capable of transmitting data in extended reach passive optica
