We demonstrate the first monolithic integration of a Metal-Semiconductor-Metal (MSM) InGaAs photodetector with an FET and resistors into a high-impedance front-end photoreceiver circuit.
We demonstrate the first monolithic integration of a Metal- Semiconductor-Metal (MSM) photodetector with an FET and resistors into a high-impedance front-end photoreceiver circuit.
Monolithically integrated InGaAs PIN-amplifiers have been successfully fabricated.
We have demonstrated a semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a novel dual-waveguide beam expander at the input for low-loss coupling to Plan
The fabrication and performance characteristics of a thermoelectrically tunable single-wavelength integrated external cavity distributed Bragg reflector laser are described.
A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported.
A monolithically integrated tuneable photonic source designed for the generation and modulation of millimetre-wave signals is demonstrated up to 120 GHz.
We present a monolithically integrated silicon-photonics 10-channel VOA-MUX (variable optical attenuators with multiplexing filters) with on-chip power monitors.
In a (t,n,m,)-multi-partioning problem we partition t lists of nm ordered numbers into n sets, where each set contains m numbers from each list.
Monotonicity and continuity are important qualitative properties of stochastic discrete event systems, such as networks of queues.
