We report on the first hybrid III-V on silicon integration of a DFB laser, an electro-absorption modulator and a semiconductor optical amplifier.
A DSP enabled NG-PON scheme has been demonstrated carrying symmetric downlink/uplink 25Gbps PAM4/DB-NRZ and 40Gbs PAM8/DB-PAM4 using 10GHz optics, costly devices like ADC/DAC/DSP have all been cent
III-V/SOI DFB lasers have been designed and fabricated using wafer bonding.
A very high efficient, low distortion C-band power amplifier using a linear and non-linear models of the PHEMT devices has been developed.
26-Gbps serial transmission over 40-km is demonstrated for downstream PON. Duobinary detection allows for a 7-GHz APD receiver at the ONU.
Pulse generation from a mode-locked single-section 1.55 mum quantum-dash FP laser is demonstrated under continuous-wave operation.
We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio.
We employ a ray tracing framework to extract the three dimensional (3D) channel parameters characterizing outdoor small cell deployments providing services to indoor users close to the exterior wal
We demonstrate a monolithic InP modulator that produces 28-Gbaud square or hexagonal 16QAM using four integrated amplitude/phase modulators.
Using an integrated coherent front end, four high speed ADCs and powerful FPGA, a fully reprogrammable coherent receiver is reported and impact of various parameters on system performance are measu
