An apparatus designed to monitor the development rate and thus control the feature size of electron beam exposed positive- acting resists on photomask substrates is presented.
A good approach to managing the risks of Intelligent Network investment is to move in gradual steps from today's IN/1 architecture towards an architecture meeting the objectives providing by IN vis
This paper describes the implementation of a heterogeneous network node as a reconfigurable application based on embedded ASIC technology.
The structure and field effect mobility of a bilayer film of friction-transferred PTFE and P3HT on a SiO sub 2 substrate was studied.
Software development for the AT&T 5ESS(R) Switch employs design reviews, code inspections, and several levels of testing to verify and improve the quality of the developing software.
Software development for the AT&T 5ESS(R) Switch employs design reviews, code inspections, and several levels of testing to verify and improve the quality of the developing software.
The transformation of a clean Si surface to a buried Si/SiO sub 2 interface is observed directly in-situ in a UHV transmission electron microscope.
The effectiveness of barrier metals such as Cr, Ni, Pd, Pt and Ti in gold metallization contacts on InGaAsP/InP was studied.
This article describes a method, referred to as inband coding, for communicating diagnostic or control information over the same frequency band as the primary channel.
The fast growing complexity of today's real time embedded systems necessitates new design methods and tools to face the problems of integration and validation of complex systems.
