A High-Voltage Dual-Gate DMOS Structure (DGDMOS)

This abstract was originally not approved: 091085 by CG. They did approve on 120385 but paperwork never reached our office, refer to folder. Abstract: This paper describes a MOS gated bidirectional switching device that we call a D2MOS. The structure incorporates two n-channel DMOS transistors in a single region with a common drain. The structure is similar to a TRIMOS described by Plummer, etal., but differs in its operational characteristics in that a cellular array has been used to emphasize the linear characteristic through the origin and separate gate contacts are used to allow high voltage operation while using 1000 A gate oxides.