Characterization of GaAs grown by MOCVD on Si-on-insulator.
01 January 1987
Epitaxial GaAs layers were grown by Metal Organic Chemical Vapor Deposition on Si-on-insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01-4micron). The surface morphology, ion backscattering yield, x-ray diffraction peak width and Si implant activation efficiency all improve substantially with GaAs thickness. At a film thickness of 4micron many of these properties are comparable to bulk GaAs, but some cracking of the epitaxial film is evident. Cross-sectional transmission electron microscopy reveals an average defect density of ~10 sup 8 cm sup (-2) in the GaAs layer, which is similar to the density in GaAs films grown directly on Si.