Chemical Beam Epitaxial Growth of InAs using Trimethylindium and Arsine.

We report the growth study of InAs by chemical beam epitaxy. Growth conditions for high quality epilayer has been determined from in-situ reflection high energy electron diffraction pattern, surface morphology, photoluminescence and Hall measurement. The growth rate measurement shows that the pyrolysis characteristics of trimethyl-indium are qualitatively similar to that of triethyl- gallium which can be described by a relatively simple surface chemical kinetics model. The boundary condition between In- and As-stablized surface in the previously unexplored temperature range of 520-560C gives an activation energy of 3.1 eV for the As desorption from InAs surface.