Cluster Formation and Growth in Si Ion Implanted C-Si
14 February 2000
Formation condition and annealing kinetics of self-interstitial (I) clusters in ion implanted Si have been investigated. Deep level transient spectroscopy (DLTS) and photoluminescence (PL) measurements were performed on both p-type and n-type Czochralski Si samples implanted with Si ions at energies ranging from 40 keV to 1.2 MeV. They reveal that I-clusters form for implantation fluences above 10 sup (12) cm sup (-2) implants, and this value increases towards the typical [311] extended defects dissociation energy value (~ 3.8 eV) by increasing the implantation fluence. Finally, the transition from I-clusters to [311] defects was followed using PL and DLTS in combination with transmission electron microscopy analysis. A PL line at 1375 nm has been associated to [311] extended defects and a threshold dose and annealing temperature for the extended defects formation identified.