Controlled Doping of GaAs Films Grown With Tertiarybutylarsine.

To assess the suitability of alternative arsenic compounds for device applications, development of growth procedures for controlled n and p doping are required. In this paper we report the first studies of the doping characteristics of sulfur, silicon and carbon species in GaAs films grown with tertiarybutylarsine, t-BuAsH sub 2. Hydrogen sulfide, H sub 2 S, and hexamethyldisilane, (CH3) sub 6 Si sub 2, were used as dopant sources. The effects of growth temperature, dopant source concentration, V/III ratio and substrate crystallographic orientation on dopant incorporation were investigated. We demonstrate the capability of controllably doping GaAs films grown with t- BuAsH sub 2, and report the first fabrication of active devices (n sup + -n MESFETs) from BAsH2-grown material. These devices exhibited dc and microwave performance comparable to that achieved with arsine-grown devices.