Crescent InGaAsP mesa substrate buried heterostructure lasers at 1.55micron.
11 July 2007
Lasers with an inverted buried crescent active layer have been grown over mesa substrates in a single liquid phase epitaxial growth step. Threshold currents are 50-70 mA. High output power, with linear light current characteristics up to 18 mW, is seen. The temperature dependence is characterized by T(o) = 70C, which is higher than normally seen in 1.55micron lasers.