Deep UV Photochemistry of Copolymers of Trimethylsilylmethyl Methacrylate and Chloromethyl Styrene

As integrated circuit technology becomes more sophisticated, greater demands are placed on the resist materials used in the lithographic pattern definition process. Necessary material requirements include sufficient sensitivity to expose in order to ensure appropriate throughput and adequate resolution to enable VLSI device fabrication. Dry etching resistance has become increasingly desirable in pattern transfer, especially for features