Direct Observation of Void Morphology in Step-Like Electromigration Resistance Behavior and its Correlation with Critical Current Density

Electromigration failure continues to be an outstanding reliability issue as future technology requires higher interconnect packing density. On one hand, the ever increased complexity of interconnects requires more demanding reliability of each component. On the other hand, the higher current density associated with feature shrinking aggravates the electromigration performance. To ensure benign interconnect reliability, industry has been continuing its relentless effort in electromigration studies.